‍‍‍Rotatable Si Sputtering Target‍

Chemical Composition: Si                                               Resistivity(20℃):0.01-400Ω. cm

Molding process: Spray                                                   Density:≥2.26g/cm³(≥96%)

Purity:≥99.95%

Application: Mainly used for producing SiO2/Si3N4 film, mainly used in Op

‍‍Rotatable Cu Sputtering Target‍

Chemical Composition: Cu                         Molding process: Spray

Density:≥8.57g/cm³(≥96%)                             Purity:99.9%-99.99%(according to customer requireme nts)

Application:Widely used in decorative & functional coat ing,semiconductor electronics,TFT-LCD