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Rotatable Si Sputtering Target‍


Chemical Composition: Si                                               Resistivity(20℃):0.01-400Ω. cm

Molding process: Spray                                                   Density:≥2.26g/cm3(≥96%)

Purity:≥99.95%

Application: Mainly used for producing SiO2/Si3N4 film, mainly used in Op



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Rotatable Al Sputtering Target‍


Chemical Composition: Al                                        Molding process: Spray

Density:≥2.6g/cm3(≥96%)                                        Purity:≥99.9%-99.99%

Application: Widely used in decorative & functional coat ing, semiconductor electronics, TFT-LCD



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‍Rotatable Cu Sputtering Target‍


Chemical Composition: Cu                         Molding process: Spray

Density:≥8.57g/cm3(≥96%)                             Purity:99.9%-99.99%(according to customer requireme nts)

Application:Widely used in decorative & functional coat ing,semiconductor electronics,TFT-LCD



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